Low Geometry Device Burn-In Solutions

Low Geometry Device Burn-In Solutions

Today's low geometry semiconductor devices require a�different approach to performing High Temperature�Operating Life (HTOL) and "Burn-In". Core Leakage currents�vary greatly between device die, even when from the same�wafer, and are significantly higher than those of larger�geometry devices. These leakage currents result�in self-heating within the device and increased junction�temperatures (Tj).�In order to control the junction temperature to within�acceptable limits and to increase product yield, it is�necessary to control the temperature of each device�independently. This is not possible in conventional�chamber based HTOL systems.�